The three-stage amplifier is fabricated with a Space-Qualified, 0.25 μm GaN on SiC process and biased at a drain voltage of 25 V.
The surface-mount version is offered in a 7 x 7 mm hermetically-sealed ceramic package. Alternatively, the chip is available as bare die or as an integrated power amplifier module with detectors for power and temperature.
The module size is 63 x 60 x 25 mm and has 2.92 mm connectors. The surface mount and bare die versions are available with evaluation boards for system design and test.
These devices are part of the complete Arralis Ka-band satellite product line, including GaAs power amplifiers, low noise amplifiers, mixers, phase shifters and core chips.
The full datasheet for the K-10WHPA-1721 can be found below. If you have any questions or would like to request a quotation based on your specific requirements, please contact in**@rf***.uk
About Arralis:
Arralis offers market-leading solutions for communications and radar systems, specializing in the design and build of high frequency transceivers, RF mm-wave sub-systems and innovative antennas.
Click here to download the full datasheet – K-HPA10W-1721-SM
Steve helps Engineers and Scientists to identify solutions for the design of RF and Microwave Systems and Optical Systems by listening to their challenges and calling upon his extensive knowledge of suppliers and specifications to deliver technical and commercial objectives.
